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HGTG20N60B3
Data Sheet October 2004
40A, 600V, UFS Series N-Channel IGBTs
The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49050.
Features
* 40A, 600V at TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC * Short Circuit Rated * Low Conduction Loss * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Packaging
JEDEC STYLE TO-247
E
Ordering Information
PART NUMBER HGTG20N60B3 PACKAGE TO-247 BRAND HG20N60B3
C G
NOTE: When ordering, use the entire part number.
COLLECTOR (FLANGE)
Symbol
C
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2004 Fairchild Semiconductor Corporation
HGTG20N60B3 Rev.B3
HGTG20N60B3
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTG20N60B3 Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector to Gate Voltage, RGE = 1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 40 20 160 20 30 30A at 600V 165 1.32 -40 to 150 300 260 4 10 W W/oC
oC oC oC
UNITS V V A A A V V
600 600
s s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE = 360V, TC = 125oC, RG = 25.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) VGE(TH) IGES SSOA VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON EOFF RJC TEST CONDITIONS IC = 250A, VGE = 0V IC = -10mA, VGE = 0V VCE = BVCES IC = IC110, VGE = 15V IC = 250A, VCE = VGE VGE = 20V TC = 150oC, VGE = 15V, RG = 10, L = 45H VCE = 480V VCE = 600V VGE = 15V VGE = 20V TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 20 3.0 100 30 TYP 1.8 2.1 5.0 8.0 80 105 25 20 220 140 475 1050 MAX 250 1.0 2.0 2.5 6.0 100 105 135 275 175 0.76 UNITS V V A mA V V V nA A A V nC nC ns ns ns ns J J
oC/W
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Thermal Resistance NOTE:
IC = IC110, VCE = 0.5 BVCES IC = IC110 , VCE = 0.5 BVCES TC = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10 L = 100H
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG20N60B3 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses.
(c)2004 Fairchild Semiconductor Corporation
HGTG20N60B3 Rev.B3
HGTG20N60B3 Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) PULSE DURATION = 250s DUTY CYCLE <0.5%, VCE = 10V TC = 150oC 60 TC = 25oC 40 TC = -40oC 20 ICE , COLLECTOR TO EMITTER CURRENT (A) 100 100 VGE = 15V 80 TC = 25oC 12V VGE = 10V PULSE DURATION = 250s DUTY CYCLE <0.5% VGE = 9V 60 VGE = 8.5V 40 VGE = 8.0V 20 VGE = 7.5V VGE = 7.0V 0 0 2 4 6 8 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V)
80
0 4 6 8 10 12 VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
50 ICE , DC COLLECTOR CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
100 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V 80 TC = 25oC
40 VGE = 15V 30
60 TC = -40oC 40 TC = 150oC 20
20
10
0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC)
0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
5000 FREQUENCY = 1MHz CIES 4000 C, CAPACITANCE (pF)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
600
15 VGE , GATE TO EMITTER VOLTAGE (V)
480 VCE = 600V 360 VCE = 400V VCE = 200V 120 TC = 25oC 0 0 20 40 60 80 100 Ig(REF) = 1.685mA RL = 30
12
3000
9
2000 COES 1000 CRES 0 0 5 10 15 20 25 VCE , COLLECTOR TO EMITTER VOLTAGE (V)
240
6
3
0
QG , GATE CHARGE (nC)
FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS
(c)2004 Fairchild Semiconductor Corporation
HGTG20N60B3 Rev.B3
HGTG20N60B3 Typical Performance Curves
100 td(ON)I , TURN-ON DELAY TIME (ns) TJ = 150oC, RG = 10, L = 100H
(Continued)
500 td(OFF)I , TURN-OFF DELAY TIME (ns) 400 TJ = 150oC, RG = 10, L = 100H
50 40 30 VCE = 480V, VGE = 15V
300
VCE = 480V, VGE = 15V
200
20
10 0 10 20 30 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
100 0 10 20 30 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
100
TJ = 150oC, RG = 10, L = 100H
1000
TJ = 150oC, RG = 10, L = 100H VCE = 480V, VGE = 15V
trI , TURN-ON RISE TIME (ns)
VCE = 480V, VGE = 15V 10
tfI , FALL TIME (ns)
100
1 0 10 20 30 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
10 0 10 20 30 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
1400 EON , TURN-ON ENERGY LOSS (J) 1200 1000 VCE = 480V, VGE = 15V 800 600 400 200 0 0 10 20 30 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT
2500 EOFF, TURN-OFF ENERGY LOSS (J)
TJ = 150oC, RG = 10, L = 100H
TJ = 150oC, RG = 10, L = 100H
2000
1500
VCE = 480V, VGE = 15V
1000
500
0 0 10 20 30 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
(c)2004 Fairchild Semiconductor Corporation
HGTG20N60B3 Rev.B3
HGTG20N60B3 Typical Performance Curves
500 fMAX , OPERATING FREQUENCY (kHz) TJ = 150oC, TC = 75oC, VGE = 15V RG = 10, L = 100H VCE = 480V 100 fMAX1 = 0.05/(td(OFF)I + td(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC 10 5 = 0.76oC/W 10 20 30 40
(Continued)
ICE , COLLECTOR TO EMITTER CURRENT (A) 120 TC = 150oC, VGE = 15V, RG = 10 100 80 60 40 20 0
0
100
200
300
400
500
600
700
ICE , COLLECTOR TO EMITTER CURRENT (A)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
ZJC , NORMALIZED THERMAL RESPONSE
100
0.5 0.2
10-1
0.1 0.05 0.02 0.01 t1 SINGLE PULSE DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC PD t2 100 101
10-2
10-3 10-5
10-4
10-3
10-2
10-1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveform
L = 100H RHRP3060 VGE
90% 10% EOFF EON
RG = 10 + VDD = 480V
VCE 90% ICE 10% td(OFF)I tfI trI td(ON)I
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 17. SWITCHING TEST WAVEFORMS
(c)2004 Fairchild Semiconductor Corporation
HGTG20N60B3 Rev.B3
HGTG20N60B3 Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I + td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 17. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 17. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF ; i.e., the collector current equals zero (ICE = 0).
(c)2004 Fairchild Semiconductor Corporation
HGTG20N60B3 Rev.B3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I13

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